The fabrication of nanoscale Bi2Te3/Sb2Te3 multilayer thin film-based thermoelectric power chips
In this work, we report our method of fabricating nanoscale multilayered Bi2Te3/Sb2Te3 thin film-based integrated thermoelectric devices, and detail the voltage and power produced by the device. The multilayered Bi2Te3/Sb2Te3 thin film was grown via e-beam evaporation; it had 20 alternating Bi2Te3- and Sb2Te3-layers, each layer being 1.5 nm thick. We characterized the film using high-resolution transmission electron microscopy (HRTEM), revealing its excellent cross-sectional structure without any obvious interface defects. The Bi2Te3/Sb2Te3 multilayer films were investigated by synchrotron x-ray scattering. An integrated device including 128×256 thermoelectric elements was fabricated from the multilayered film. An open-circuit voltage of 51 mV andmore »